Barry P. Rand

Associate Professor of Electrical and Computer Engineering and Andlinger Center for Energy and the Environment
Office Phone
B414 Engineering Quadrangle
  • PhD, Princeton University, 2007
  • BE, Electrical Engineering, The Cooper Union, 2001

Associate Professor of Electrical and Computer Engineering and Andlinger Center for Energy and the Environment
Associated Faculty in the Princeton Institute of Materials (PRISM)
Associated Faculty in the High Meadows Environmental Institute (HMEI)

Thin film electronics made from emerging semiconductors have the capacity to be pervasive within our daily lives. Notably, some thin film devices have established themselves quite successfully, such as the OLED for flat panel displays.

The goal of my research is to work on emerging device concepts and materials to help to realize the next generation of thin film electronic devices. Specifically, we try to understand and leverage the unique electronic and optical properties of thin film materials, and in particular semiconductors. This includes the use of molecular, perovskite, and chalcogenide (e.g. oxide) semiconductors, as well as nanostructured quantized matter for emerging applications in solar cells, light emitting devices, and transistors.

Studies that we conduct range from those on fundamental optical and electrical characterization to device physics and engineering to processing. Being interdisciplinary in nature, our work resides at the intersection of electrical engineering, materials science, physics, and chemistry, and we work with materials processed either in vacuum or via solution-phase. Our labs therefore consist of infrastructure for the preparation and testing of thin films and devices.



Selected Publications
  1. Improved outcoupling efficiency and stability of perovskite light emitting diodes using thin emitting layers,” L. Zhao, K.M. Lee, K. Roh, S.-U.-Z. Khan, B.P. Rand, Adv. Mater., 31, 1805836 (2019).

  2. Engineering perovskite nanocrystal surface termination for light emitting diodes with external quantum efficiency exceeding 15%,” Z. Xiao, R.A. Kerner, N. Tran, L. Zhao, G.D. Scholes, B.P. Rand, Adv. Funct. Mater., 29, 1807284 (2019).

  3. Mixed lead-tin halide perovskites for efficient and wavelength-tunable near-infrared light-emitting diodes,” W. Qiu, Z. Xiao, K. Roh, N.K. Noel, A. Shapiro, P. Heremans, B.P. Rand, Adv. Mater.31, 1806105 (2019).

  4. "Ionic-electronic ambipolar transport in metal halide perovskites: Can electronic conductivity limit ionic diffusion?” R.A. Kerner, B.P. Rand, J. Phys. Chem. Lett.9, 132 (2018).

  5. "The impact of local morphology on organic donor/acceptor charge transfer states," Y.L. Lin, M.A. Fusella, B.P. Rand, Adv. Energy Mater.8, 1702816 (2018).

Google Scholar Profile

Honors and Awards:

  • ONR Young Investigator Program Award (2016)
  • DARPA Young Faculty Award (2015)
  • DuPont Young Professor Award (2015)
  • 3M Nontenured Faculty Award (2014)
Research Areas
Applied Physics
Energy & Environment
Materials & Devices