Abstract:
We review the modeling techniques for mid-infrared quantum cascade lasers based on III/V materials, clarifies or corrects ambiguity concepts such as state-dependent effective mass, the non-parabolic kinetic energy and its modeling, and the polarized waveguide confinement in the mathematical perturbation sense.
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The spin of electrons in silicon quantum dots has been a promising candidate for qubits for quantum computing applications in recent years, demonstrating long coherence time due to its weak spin-orbit coupling and the existence of stable zero nuclear spin isotopes. However, a fundamental challenge is the degeneracy of the conduction band minima, which is a decoherence source. The realization of atomically flat Si/SiGe heterostructures which can potentially solve the small valley splitting issue in Si/SiGe quantum dots applications motivated this work.
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Electron and hole systems confined in two dimensions (2D) exhibit a plethora of exotic quantum phases under perpendicular magnetic fields at sufficiently low temperatures (milli-Kelvin range). The work presented here explores two of these quantum phases in state-of-the-art high-quality GaAs and InAs quantum wells.
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